SGH30N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGH30N60RUFDTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
235W
Current Rating
30A
Number of Elements
1
Element Configuration
Single
Power Dissipation
235W
Input Type
Standard
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
48A
Reverse Recovery Time
95ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Turn On Time
101 ns
Test Condition
300V, 30A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 30A
Turn Off Time-Nom (toff)
341 ns
Gate Charge
85nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
30ns/54ns
Switching Energy
919μJ (on), 814μJ (off)
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.824640
$3.82464
10
$3.608151
$36.08151
100
$3.403916
$340.3916
500
$3.211241
$1605.6205
1000
$3.029473
$3029.473
SGH30N60RUFDTU Product Details
SGH30N60RUFDTU Description
Fairchild's RUFD series ofInsulated Gate Bipolar Transistors(IGBTs)provide low conduction and switching losses as well as short circuit ruggedness. TheRUFD series is designed for applications such as motor control uninterrupted power supplies(UPS)and general inverters where short circuit ruggedness is a required feature.