SIGC03T60EX1SA1

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Manufacturer part number:SIGC03T60EX1SA1

Manufacturer:Infineon Technologies

Description:SIGC03T60EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SIGC03T60EX1SA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Die
Operating Temperature	-40°C~175°C TJ
Published	2016
Series	TrenchStop™
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Input Type	Standard
Halogen Free	Halogen Free
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Dual Supply Voltage	600V
Current - Collector (Ic) (Max)	4A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 4A
IGBT Type	Trench Field Stop
Current - Collector Pulsed (Icm)	12A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

SIGC03T60EX1SA1 Description

SIGC03T60EX1SA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC03T60EX1SA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC03T60EX1SA1 has the common source configuration.

SIGC03T60EX1SA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SIGC03T60EX1SA1 Applications

ISM applications

DC large signal applications

Power factor correction