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IRGC4059B

IRGC4059B

IRGC4059B

Infineon Technologies

IRGC4059B datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGC4059B Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Bulk
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
JESD-30 Code R-XUUC-N2
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 4A
IGBT Type Trench
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
IRGC4059B Product Details

IRGC4059B Description


IRGC4059B is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE (ON) and low switching losses, it is well suited for a wide range of switching frequencies. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Increased reliability can be ensured based on rugged transient performance for increased reliability.



IRGC4059B Features


Low VCE (on) Trench IGBT technology

Low switching losses

Maximum Junction temperature 175 °C

5μs SCSOA

Square RBSOA

Positive VCE (on) temperature coefficient



IRGC4059B Applications


Industrial motor drive

UPS

Solar Inverters

Welding 


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