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IRGP4078DPBF

IRGP4078DPBF

IRGP4078DPBF

Infineon Technologies

IRGP4078DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4078DPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 278W
Element Configuration Single
Input Type Standard
Power - Max 278W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 74A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
IGBT Type Trench
Gate Charge 92nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C -/116ns
Switching Energy 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.501000 $5.501
10 $5.189623 $51.89623
100 $4.895870 $489.587
500 $4.618746 $2309.373
1000 $4.357307 $4357.307
IRGP4078DPBF Product Details

IRGP4078DPBF Description


IRGP4078DPBF is a 600v n-channel insulated gate bipolar transistor with an ultra-low VF diode for induction heating and soft switching applications. The Infineon IRGP4078DPBF provides high efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGP4078DPBF is in the TO-247AC package with 278 power dissipation.



IRGP4078DPBF Features


Low VcE (ON) Trench IGBT Technology

Low Switching Losses

Maximum Junction temperature 175°C.

5 μs short circuit SOA

Square RBSOA

100% of the parts tested for LLM

Positive VcE (ON) Temperature coefficient

Ultra-low VF Hyperfast Diode

Tight parameter distribution



IRGP4078DPBF Applications


Communications equipment 

Datacom module 

Industrial 

Building automation 

Enterprise systems 

Datacenter & enterprise computing


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