IRGP4078DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP4078DPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
278W
Element Configuration
Single
Input Type
Standard
Power - Max
278W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
74A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Test Condition
400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 50A
IGBT Type
Trench
Gate Charge
92nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
-/116ns
Switching Energy
1.1mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
20.7mm
Length
15.87mm
Width
5.31mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.501000
$5.501
10
$5.189623
$51.89623
100
$4.895870
$489.587
500
$4.618746
$2309.373
1000
$4.357307
$4357.307
IRGP4078DPBF Product Details
IRGP4078DPBF Description
IRGP4078DPBF is a 600v n-channel insulated gate bipolar transistor with an ultra-low VF diode for induction heating and soft switching applications. The Infineon IRGP4078DPBF provides high efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGP4078DPBF is in the TO-247AC package with 278 power dissipation.