IRGP4640D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGP4640D-EPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
250W
Base Part Number
IRGP4640
Element Configuration
Single
Power Dissipation
125W
Input Type
Standard
Power - Max
250W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
65A
Reverse Recovery Time
89 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Test Condition
400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 24A
Gate Charge
75nC
Current - Collector Pulsed (Icm)
72A
Td (on/off) @ 25°C
41ns/104ns
Switching Energy
115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
41ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.27000
$6.27
25
$5.39800
$134.95
100
$4.68710
$468.71
500
$4.08144
$2040.72
1,000
$3.55481
$3.55481
IRGP4640D-EPBF Product Details
IRGP4640D-EPBF Description
IRGP4640D-EPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its 5.5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications.