RJH60F5BDPQ-A0#T0

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Manufacturer part number:RJH60F5BDPQ-A0#T0

Manufacturer:Renesas Electronics America

Description:IGBT 600V 80A 260.4W TO-247A

Case Package:SOT-23

Datasheet:RJH60F5BDPQ-A0#T0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Published	2012
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	260.4W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	RJH60F
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	260.4W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	87 ns
Test Condition	400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 40A
Turn Off Time-Nom (toff)	163 ns
IGBT Type	Trench
Td (on/off) @ 25°C	53ns/95ns
Gate-Emitter Thr Voltage-Max	8V
RoHS Status	ROHS3 Compliant