IXSH50N60B

new-10%

Manufacturer part number:IXSH50N60B

Manufacturer:IXYS

Description:IGBT 600V 75A 250W TO247

Case Package:SOT-23

Datasheet:IXSH50N60B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*50N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	70 ns
Test Condition	480V, 50A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 50A
Turn Off Time-Nom (toff)	230 ns
IGBT Type	PT
Gate Charge	167nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	70ns/150ns
Switching Energy	3.3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	8V
RoHS Status	RoHS Compliant