IRG7PH28UD1PBF         Description

 A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.

IRG7PH28UD1PBF          Features

·  Low VCE (ON) trench IGBT technology

·  Low switching losses

·  Square RBSOA

·  Ultra-low VF diode

·  1300Vpk repetitive transient capacity

·  100% of the parts tested for ILM?

·  Positive VCE (ON) temperature co-efficient

·  Tight parameter distribution

·  Lead-free package

IRG7PH28UD1PBF         Applications

■ High frequency motor controls, inverters, UPS

■ HF, SMPS and PFC in both hard switch and

resonant topologies