NGD8201NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGD8201NT4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn80Pb20)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
400V
Max Power Dissipation
125W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
20A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
NGD8201N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Rise Time-Max
14000ns
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation
125W
Case Connection
COLLECTOR
Input Type
Logic
Transistor Application
AUTOMOTIVE IGNITION
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
20A
Collector Emitter Breakdown Voltage
440V
Turn On Time
6500 ns
Test Condition
300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic
1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff)
18500 ns
Current - Collector Pulsed (Icm)
50A
Td (on/off) @ 25°C
-/5μs
Gate-Emitter Voltage-Max
15V
Fall Time-Max (tf)
7000ns
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
NGD8201NT4 Product Details
NGD8201NT4 Description
NGD8201NT4 is a type of logic-level insulated gate bipolar transistor (IGBT) developed by ON Semiconductor. Its monolithic circuitry used in inductive coil driver applications is able to provide ESD and Overvoltage clamped protection. It is well suited for ignition, direct fuel injection, and applications requiring high voltage and high current switching.