IXST15N120B

new-10%

Manufacturer part number:IXST15N120B

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXST15N120B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	FAST SWITCHING, LOW SWITCHING LOSSES
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*15N120
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	30A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.4V
Turn On Time	55 ns
Test Condition	960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 15A
Turn Off Time-Nom (toff)	563 ns
IGBT Type	PT
Gate Charge	57nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	30ns/148ns
Switching Energy	1.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	RoHS Compliant