NGTB20N120IHSWG Description

The NGTB20N120IHSWG insulated gate bipolar transistor offers low on-state voltage and minimal switching loss, as well as a durable and affordable field stop trench structure, which contributes to its high performance in demanding switching applications. For resonance or soft switching applications, the IGBT is well suited. A robust co-packaged free-wheeling diode with a low forward voltage is incorporated into the gadget.

NGTB20N120IHSWG Features

• Low gate charge

• These are Pb-free devices

• Low switching loss reduces system power dissipation

• Optimized for low case temperature in IH cooker application

• Low saturation voltage using trench with field stop technology

NGTB20N120IHSWG Applications

• Soft switching

• Inductive heating

• Consumer appliances