IRGR4610DTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGR4610DTRRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
350.003213mg
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
77W
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Element Configuration
Single
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
10A
Reverse Recovery Time
74 ns
Collector Emitter Breakdown Voltage
600V
Current - Collector (Ic) (Max)
16A
Collector Emitter Saturation Voltage
2.14V
Test Condition
400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 6A
Gate Charge
13nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
27ns/75ns
Switching Energy
56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
RoHS Compliant
IRGR4610DTRRPBF Product Details
IRGR4610DTRRPBF Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.
IRGR4610DTRRPBF Applications
? Appliance Drives
? Inverters
? UPS
IRGR4610DTRRPBF Features
Low Vceon) and switching losses
Square RBSOA and maximumjunction temperature175℃
Positive VcEioN) temperature coefficient and tighter distribution of parameters