IRG4BC20FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4BC20FDPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
60W
Current Rating
16A
Polarity
NPN
Element Configuration
Single
Power Dissipation
60W
Input Type
Standard
Power - Max
60W
Rise Time
20ns
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
16A
Reverse Recovery Time
37 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
16A
Collector Emitter Saturation Voltage
1.66V
Test Condition
480V, 9A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 9A
Gate Charge
27nC
Current - Collector Pulsed (Icm)
64A
Td (on/off) @ 25°C
43ns/240ns
Switching Energy
250μJ (on), 640μJ (off)
Height
8.77mm
Length
10.5156mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.048976
$1.048976
10
$0.989600
$9.896
100
$0.933585
$93.3585
500
$0.880740
$440.37
1000
$0.830887
$830.887
IRG4BC20FDPBF Product Details
IRG4BC20FDPBF Description
IRG4BC20FDPBF is a 600v N-channel insulated gate bipolar transistor with an ultrafast soft recovery diode. The IRG4BC20FDPBF is applied to many fields, like Industrial Pro audio, video & signage Enterprise systems Enterprise machines Personal electronics, and Tablets. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC20FDPBF is in the TO-220AB package with 60W power dissipation.
IRG4BC20FDPBF Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations