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IRG4BC20FDPBF

IRG4BC20FDPBF

IRG4BC20FDPBF

Infineon Technologies

IRG4BC20FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20FDPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 60W
Current Rating 16A
Polarity NPN
Element Configuration Single
Power Dissipation 60W
Input Type Standard
Power - Max 60W
Rise Time 20ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 16A
Reverse Recovery Time 37 ns
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 16A
Collector Emitter Saturation Voltage 1.66V
Test Condition 480V, 9A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 43ns/240ns
Switching Energy 250μJ (on), 640μJ (off)
Height 8.77mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.048976 $1.048976
10 $0.989600 $9.896
100 $0.933585 $93.3585
500 $0.880740 $440.37
1000 $0.830887 $830.887
IRG4BC20FDPBF Product Details

IRG4BC20FDPBF Description


IRG4BC20FDPBF is a 600v N-channel insulated gate bipolar transistor with an ultrafast soft recovery diode. The IRG4BC20FDPBF is applied to many fields, like Industrial Pro audio, video & signage Enterprise systems Enterprise machines Personal electronics, and Tablets. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC20FDPBF is in the TO-220AB package with 60W power dissipation.



IRG4BC20FDPBF Features


Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Industry-standard TO-220AB package

Lead-Free



IRG4BC20FDPBF Applications


Industrial 

Pro audio, video & signage 

Enterprise systems 

Enterprise machine 

Personal electronics 

Tablets


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