IRGB30B60KPBF

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Manufacturer part number:IRGB30B60KPBF

Manufacturer:Infineon Technologies

Description:IRGB30B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGB30B60KPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	370W
Current Rating	78A
Number of Elements	1
Element Configuration	Single
Power Dissipation	370W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	28ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.35V
Max Collector Current	78A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.35V
Turn On Time	74 ns
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 30A
Turn Off Time-Nom (toff)	237 ns
IGBT Type	NPT
Gate Charge	102nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	46ns/185ns
Switching Energy	350μJ (on), 825μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	42ns
Height	16.51mm
Length	10.6426mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free