HGT1S20N60A4S9A Description

The HGT1S20N60A4S9A is a 600V, SMPS Series N-Channel IGBT. The MOS gated high voltage switching HGT1S20N60A4S9A device combines the greatest qualities of MOSFETs and bipolar transistors. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies slightly.

This IGBT is perfect for many high-frequency, high-voltage switching applications where it is crucial to have minimal conduction losses. It has been designed to work best with high frequency switch mode power supply.

Developmental Type TA49339 used to be.

HGT1S20N60A4S9A Features

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125°C

• Low Conduction Loss 

• >100kHz Operation at 390V, 20A

• 200kHz Operation at 390V, 12A

HGT1S20N60A4S9A Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.