IRGS4630DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGS4630DPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
206W
Reach Compliance Code
unknown
Element Configuration
Single
Input Type
Standard
Power - Max
206W
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
47A
Reverse Recovery Time
100 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.65V
Test Condition
400V, 18A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 18A
Gate Charge
35nC
Current - Collector Pulsed (Icm)
54A
Td (on/off) @ 25°C
40ns/105ns
Switching Energy
95μJ (on), 350μJ (off)
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.72000
$1.72
500
$1.7028
$851.4
1000
$1.6856
$1685.6
1500
$1.6684
$2502.6
2000
$1.6512
$3302.4
2500
$1.634
$4085
IRGS4630DPBF Product Details
IRGS4630DPBF Description
IRGS4630DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of switching frequencies.