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SGU20N40LTU

SGU20N40LTU

SGU20N40LTU

ON Semiconductor

SGU20N40LTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGU20N40LTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 400V
Max Power Dissipation 45W
Current Rating 150A
Element Configuration Single
Power Dissipation 45W
Input Type Standard
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 4.5V
Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 150A
IGBT Type Trench
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.994421 $0.994421
10 $0.938133 $9.38133
100 $0.885031 $88.5031
500 $0.834935 $417.4675
1000 $0.787674 $787.674
SGU20N40LTU Product Details

SGU20N40LTU Description

 

SGU20N40LTU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SGU20N40LTU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor SGU20N40LTU has the common source configuration.

 

 

SGU20N40LTU Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

SGU20N40LTU Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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