SGU20N40LTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGU20N40LTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
400V
Max Power Dissipation
45W
Current Rating
150A
Element Configuration
Single
Power Dissipation
45W
Input Type
Standard
Collector Emitter Voltage (VCEO)
400V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
4.5V
Vce(on) (Max) @ Vge, Ic
8V @ 4.5V, 150A
IGBT Type
Trench
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.994421
$0.994421
10
$0.938133
$9.38133
100
$0.885031
$88.5031
500
$0.834935
$417.4675
1000
$0.787674
$787.674
SGU20N40LTU Product Details
SGU20N40LTU Description
SGU20N40LTU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SGU20N40LTU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor SGU20N40LTU has the common source configuration.