IXA20I1200PB

new-10%

Manufacturer part number:IXA20I1200PB

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXA20I1200PB IGBT Single Transistor, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 Pins

Case Package:SOT-23

Datasheet:IXA20I1200PB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2009
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	165W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	130W
Input Type	Standard
Power - Max	165W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	38A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	110 ns
Test Condition	600V, 15A, 56 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 15A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	47nC
Switching Energy	1.65mJ (on), 1.7mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	16mm
Length	10.66mm
Width	4.82mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant