FGA30N120FTDTU

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Manufacturer part number:FGA30N120FTDTU

Manufacturer:ON Semiconductor

Description:FGA30N120FTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA30N120FTDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	339W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	339W
Input Type	Standard
Turn On Delay Time	31 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	198 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	60A
Reverse Recovery Time	730ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2V
Turn On Time	167 ns
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Turn Off Time-Nom (toff)	575 ns
IGBT Type	Trench Field Stop
Gate Charge	208nC
Current - Collector Pulsed (Icm)	90A
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7.5V
Height	20.1mm
Length	15.8mm
Width	5mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free