IRLHS6342TR2PBF

new-10%

Manufacturer part number:IRLHS6342TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 8.7A PQFN

Case Package:SOT-23

Datasheet:IRLHS6342TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerVDFN
Number of Pins	6
Supplier Device Package	6-PQFN (2x2)
Packaging	Cut Tape (CT)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	15.5MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.1W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	2.1W
Turn On Delay Time	4.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	15.5mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	1019pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.7A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	8.7A
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.019nF
Recovery Time	17 ns
Drain to Source Resistance	15.5mOhm
Rds On Max	15.5 mΩ
Nominal Vgs	1.1 V
Height	950μm
Length	2.1mm
Width	2.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free