SUM110N06-3M4L-E3

new-10%

SUM110N06-3M4L-E3

Manufacturer part number:SUM110N06-3M4L-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 110A D2PAK

Case Package:SOT-23

Datasheet:SUM110N06-3M4L-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	3.4mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.75W Ta 375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	280 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	440A
Avalanche Energy Rating (Eas)	280 mJ
Height	4.83mm
Length	10.41mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free