IXBF12N300

new-10%

Manufacturer part number:IXBF12N300

Manufacturer:IXYS

Description:IGBT 3000V 26A 125W ISOPLUSI4

Case Package:SOT-23

Datasheet:IXBF12N300 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	i4-Pac™-5 (3 Leads)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	BIMOSFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	ISOLATED
Input Type	Standard
Power - Max	125W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	22A
Reverse Recovery Time	1.4 μs
Collector Emitter Breakdown Voltage	3kV
Voltage - Collector Emitter Breakdown (Max)	3000V
Current - Collector (Ic) (Max)	26A
Turn On Time	460 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 12A
Turn Off Time-Nom (toff)	705 ns
Gate Charge	62nC
Current - Collector Pulsed (Icm)	98A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant