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SPB10N10L G

SPB10N10L G

SPB10N10L G

Infineon Technologies

MOSFET N-CH 100V 10.3A TO-263

SOT-23

SPB10N10L G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series SIPMOS®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 154m Ω @ 8.1A, 10V
Vgs(th) (Max) @ Id 2V @ 21μA
Input Capacitance (Ciss) (Max) @ Vds 444pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 10.3A
Drain-source On Resistance-Max 0.21Ohm
Pulsed Drain Current-Max (IDM) 42.2A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status ROHS3 Compliant

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