SI5432DC-T1-GE3

new-10%

Manufacturer part number:SI5432DC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 6A 1206-8

Case Package:SOT-23

Datasheet:SI5432DC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	20MOhm
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.5W Ta 6.3W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 8.3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	6A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	20V
Height	1.1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free