IXBX64N250

new-10%

Manufacturer part number:IXBX64N250

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 2.5KV 156A 3-Pin(3+Tab) TO-264

Case Package:SOT-23

Datasheet:IXBX64N250 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	7.300002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	BIMOSFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	735W
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	735W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5kV
Max Collector Current	156A
Reverse Recovery Time	160 ns
Collector Emitter Breakdown Voltage	2.5kV
Voltage - Collector Emitter Breakdown (Max)	2500V
Turn On Time	632 ns
Test Condition	1250V, 128A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 64A
Turn Off Time-Nom (toff)	397 ns
Gate Charge	400nC
Current - Collector Pulsed (Icm)	600A
Td (on/off) @ 25°C	49ns/232ns
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free