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IXFT140N10P

IXFT140N10P

IXFT140N10P

IXYS

IXYS SEMICONDUCTOR IXFT140N10P MOSFET Transistor, PolarFET, N Channel, 140 A, 100 V, 11 mohm, 15 V, 5 V

SOT-23

IXFT140N10P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2006
Series HiPerFET™, PolarHT™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 600W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 140A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.011Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 2500 mJ
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:705 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$37.407217$37.407217
10$35.289828$352.89828
100$33.292291$3329.2291
500$31.407821$15703.9105
1000$29.630020$29630.02

About IXFT140N10P

The IXFT140N10P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IXYS SEMICONDUCTOR IXFT140N10P MOSFET Transistor, PolarFET, N Channel, 140 A, 100 V, 11 mohm, 15 V, 5 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFT140N10P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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