IXGH56N60B3D1

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Manufacturer part number:IXGH56N60B3D1

Manufacturer:IXYS

Description:IGBT 600V 330W TO247

Case Package:SOT-23

Datasheet:IXGH56N60B3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	330W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Reverse Recovery Time	100ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	63 ns
Test Condition	480V, 44A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 44A
Turn Off Time-Nom (toff)	385 ns
IGBT Type	PT
Gate Charge	138nC
Current - Collector Pulsed (Icm)	350A
Td (on/off) @ 25°C	26ns/155ns
Switching Energy	1.3mJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	165ns
RoHS Status	ROHS3 Compliant