Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3, Short Tab
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*40N60
Pin Count	4
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	75A
Reverse Recovery Time	25 ns
JEDEC-95 Code	TO-268
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	38 ns
Test Condition	400V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Turn Off Time-Nom (toff)	210 ns
IGBT Type	PT
Gate Charge	95nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	18ns/90ns
Switching Energy	200μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant

IXGJ40N60C2D1

Related Part Number