IRG4RC10UTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4RC10UTRLPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Current Rating
8.5A
Base Part Number
IRG4RC10UPBF
Element Configuration
Single
Power Dissipation
38W
Input Type
Standard
Power - Max
38W
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
8.5A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
8.5A
Collector Emitter Saturation Voltage
2.6V
Test Condition
480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 5A
Gate Charge
15nC
Current - Collector Pulsed (Icm)
34A
Td (on/off) @ 25°C
19ns/116ns
Switching Energy
80μJ (on), 160μJ (off)
RoHS Status
RoHS Compliant
IRG4RC10UTRLPBF Product Details
IRG4RC10UTRLPBF Description
IRG4RC10UTRLPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, and>200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10UTRLPBF IGBT is supplied in the D-Pak/TO-252AA package for the purpose of saving board space.