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IRG4RC10UTRLPBF

IRG4RC10UTRLPBF

IRG4RC10UTRLPBF

Infineon Technologies

IRG4RC10UTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC10UTRLPBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 38W
Current Rating 8.5A
Base Part Number IRG4RC10UPBF
Element Configuration Single
Power Dissipation 38W
Input Type Standard
Power - Max 38W
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 8.5A
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 8.5A
Collector Emitter Saturation Voltage 2.6V
Test Condition 480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Gate Charge 15nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 19ns/116ns
Switching Energy 80μJ (on), 160μJ (off)
RoHS Status RoHS Compliant
IRG4RC10UTRLPBF Product Details

IRG4RC10UTRLPBF Description


IRG4RC10UTRLPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, and>200 kHz in resonant mode. As a Generation 4 IGBT,  it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10UTRLPBF IGBT is supplied in the D-Pak/TO-252AA package for the purpose of saving board space.



IRG4RC10UTRLPBF Features


Industry-standard D-PAK packages

Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available



IRG4RC10SDTRLP Applications


Industrial motor drive

Solar inverters

Welding 


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