IRGR2B60KDTRPBF

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Manufacturer part number:IRGR2B60KDTRPBF

Manufacturer:Infineon Technologies

Description:IRGR2B60KDTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGR2B60KDTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	35W
Base Part Number	IRGR2B60
Rise Time-Max	25ns
Element Configuration	Single
Input Type	Standard
Power - Max	35W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.25V
Max Collector Current	6.3A
Reverse Recovery Time	68 ns
Collector Emitter Breakdown Voltage	600V
Test Condition	400V, 2A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 2A
IGBT Type	NPT
Gate Charge	12nC
Current - Collector Pulsed (Icm)	8A
Td (on/off) @ 25°C	11ns/150ns
Switching Energy	74μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	75ns
Radiation Hardening	No
RoHS Status	RoHS Compliant