IRGS4056DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGS4056DPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
2
Weight
260.39037mg
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
140W
Terminal Form
GULL WING
Element Configuration
Single
Input Type
Standard
Power - Max
140W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
24A
Reverse Recovery Time
68 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.55V
Test Condition
400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 12A
IGBT Type
Trench
Gate Charge
25nC
Current - Collector Pulsed (Icm)
48A
Td (on/off) @ 25°C
31ns/83ns
Switching Energy
75μJ (on), 225μJ (off)
Gate-Emitter Voltage-Max
30V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
31ns
Height
9.65mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.810179
$0.810179
10
$0.764320
$7.6432
100
$0.721057
$72.1057
500
$0.680242
$340.121
1000
$0.641738
$641.738
IRGS4056DPBF Product Details
IRGS4056DPBF Description
IRGS4056DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of switching frequencies.