IXGM40N60

new-10%

Manufacturer part number:IXGM40N60

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 75A

Case Package:SOT-23

Datasheet:IXGM40N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-204AE
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	Insulated Gate BIP Transistors
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	O-MBFM-P2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Reverse Recovery Time	200ns
Current - Collector (Ic) (Max)	75A
Power Dissipation-Max (Abs)	250W
Turn On Time	300 ns
Test Condition	480V, 40A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Turn Off Time-Nom (toff)	1200 ns
Gate Charge	250nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	100ns/600ns
Gate-Emitter Voltage-Max	20V
VCEsat-Max	2.5 V
Gate-Emitter Thr Voltage-Max	5V
Power Dissipation Ambient-Max	250W
Fall Time-Max (tf)	2000ns
RoHS Status	ROHS3 Compliant