IXGR24N120C3D1

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Manufacturer part number:IXGR24N120C3D1

Manufacturer:IXYS

Description:IGBT 1200V 48A 200W ISOPLUS247

Case Package:SOT-23

Datasheet:IXGR24N120C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*24N120
Pin Count	247
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	4.2V
Max Collector Current	48A
Reverse Recovery Time	220 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.6V
Turn On Time	54 ns
Test Condition	600V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4.2V @ 15V, 20A
Turn Off Time-Nom (toff)	430 ns
IGBT Type	PT
Gate Charge	79nC
Current - Collector Pulsed (Icm)	96A
Td (on/off) @ 25°C	16ns/93ns
Switching Energy	1.37mJ (on), 470μJ (off)
RoHS Status	ROHS3 Compliant