NGTB75N60SWG               Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.

NGTB75N60SWG              Features

? TJmax = 175°C

? Soft Fast Reverse Recovery Diode

? Optimized for High Speed Switching

? 5 s Short?Circuit Capability

? These are Pb?Free Devices

NGTB75N60SWG              Applications

? Welding