NGTB20N135IHRWG

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Manufacturer part number:NGTB20N135IHRWG

Manufacturer:ON Semiconductor

Description:NGTB20N135IHRWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB20N135IHRWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Number of Pins	3
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	394W
Pin Count	3
Element Configuration	Single
Power Dissipation	394W
Input Type	Standard
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.35kV
Max Collector Current	40A
Collector Emitter Breakdown Voltage	1.35kV
Voltage - Collector Emitter Breakdown (Max)	1350V
Collector Emitter Saturation Voltage	2.2V
Test Condition	600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.65V @ 15V, 20A
IGBT Type	Trench Field Stop
Gate Charge	234nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	-/245ns
Switching Energy	600μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	21.4mm
Length	16.25mm
Width	5.3mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free