STGB30M65DF2 Description

The STGB30M65DF2 is an IGBT that was created using a proprietary trench gate field-stop topology. The STGB30M65DF2 is part of the M family of IGBTs, which provide the best blend of performance and efficiency in inverter systems where low-loss and short-circuit functionality are critical. In addition, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.

STGB30M65DF2 Features

• Short-circuit withstand time of 6 seconds

• @ IC = 30 A, VCE(sat) = 1.55 V (typ.)

• a tight distribution of parameters

• Paralleling is safer, and the thermal resistance is lower.

• Antiparallel diode with a soft and quick recovery time

STGB30M65DF2 Applications

• Motor control

• UPS

• PFC