IRGS4045DTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGS4045DTRRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
77W
Rise Time-Max
22ns
Element Configuration
Single
Input Type
Standard
Power - Max
77W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
12A
Reverse Recovery Time
74 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 6A
Gate Charge
19.5nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
27ns/75ns
Switching Energy
56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
22ns
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRGS4045DTRRPBF Product Details
IRGS4045DTRRPBF Description
IRGS4045DTRRPBF is a 600v insulated gate bipolar transistor with an ultrafast recovery soft recovery diode. The Infineon IRGS4045DTRRPBF provides high efficiency in a wide range of applications and switching frequencies. The diode IRGS4045DTRRPBF can be applied in appliance motor drives, inverters, and SMPS applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGS4045DTRRPBF is in the D2-Pak package with 77W power dissipation.
IRGS4045DTRRPBF Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE(ON) temperature coefficient and tighter distribution of parameters