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RJH60F6BDPQ-A0#T0

RJH60F6BDPQ-A0#T0

RJH60F6BDPQ-A0#T0

Renesas Electronics America

IGBT 600V 85A 297.6W TO-247A

SOT-23

RJH60F6BDPQ-A0#T0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 297.6W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number RJH60F
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 297.6W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.75V
Max Collector Current 85A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 138 ns
Test Condition 400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 45A
Turn Off Time-Nom (toff) 205 ns
IGBT Type Trench
Td (on/off) @ 25°C 58ns/131ns
Gate-Emitter Thr Voltage-Max 8V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.98000 $5.98

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