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APT14M120B

APT14M120B

APT14M120B

Microsemi Corporation

MOSFET (Metal Oxide) N-Channel Tube 1.2 Ω @ 7A, 10V ±30V 4765pF @ 25V 145nC @ 10V 1200V TO-247-3

SOT-23

APT14M120B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 1.2kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 14A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 625W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 625W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4765pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 14A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1.2kV
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.06000 $12.06
10 $10.85500 $108.55
100 $8.92550 $892.55
500 $7.47814 $3739.07
1,000 $6.75444 $6.75444
APT14M120B Product Details

APT14M120B Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4765pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 26 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APT14M120B Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 85 ns
a 1200V drain to source voltage (Vdss)


APT14M120B Applications


There are a lot of Microsemi Corporation
APT14M120B applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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