FGA90N30DTU Description

The FGA90N30DTU is an IGBT 300 V 90 A 219 W Through Hole TO-3P. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.

Although the IGBT's structure is topologically identical to that of a thyristor with a "MOS" gate (MOS-gate thyristor), only transistor action is allowed across the entire device's working range. Variable-frequency drives (VFDs), electric vehicles, trains, variable-speed refrigerators, light ballasts, arc welding equipment, and air conditioners are just a few examples of high-power applications that require switching power sources.

FGA90N30DTU Features

• Low saturation voltage: VCE(sat), Typ = [email protected] IC = 20A

• High Input Impedance

• High Current Capability

FGA90N30DTU Applications

• Switched-mode power supplies

• Traction motor control

• Induction heating

• Switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors

• SMPS