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STGW40M120DF3

STGW40M120DF3

STGW40M120DF3

STMicroelectronics

STGW40M120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW40M120DF3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 468W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW40
Element Configuration Single
Input Type Standard
Power - Max 468W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Reverse Recovery Time 355 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.85V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 125nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 35ns/140ns
Switching Energy 1.5mJ (on), 2.25mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
600 $8.17875 $4907.25
STGW40M120DF3 Product Details
STGW40M120DF3 Description

STGW40M120DF3 is a Trench gate field-stop IGBT, M series 1200 V, 40 A low loss, built with a patented trench gate field-stop structure. The device is part of the M family of IGBTs, which provide the best compromise in performance for inverter systems that require low-loss and short-circuit capability. A positive VCE(sat) temperature coefficient and a narrow parameter distribution also make paralleling safer. It can be utilized in UPS, solar, welding, and industrial drives, according to the STGW40M120DF3 datasheet.


STGW40M120DF3 Features

Safer paralleling
Low thermal resistance
Tight parameters distribution
10 μs of short-circuit withstand time
VCE(sat) = 1.85 V (typ.) @ IC = 40 A
Soft and fast recovery antiparallel diode


STGW40M120DF3 Applications


UPS
Solar
Welding
Industrial drives

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