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IXXX200N60C3

  • IXXX200N60C3
  • IXXX200N60C3

IXXX200N60C3

IXXX200N60C3

IXYS

IGBT 600V 200A PLUS247

SOT-23

IXXX200N60C3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series XPT™, GenX3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 340A
Collector Emitter Breakdown Voltage 600V
Power Dissipation-Max (Abs) 1630W
Turn On Time 143 ns
Test Condition 360V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 240 ns
IGBT Type PT
Gate Charge 315nC
Current - Collector Pulsed (Icm) 900A
Td (on/off) @ 25°C 47ns/125ns
Switching Energy 3mJ (on), 1.7mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.40000 $16.4
10 $14.91000 $149.1
30 $13.79167 $413.7501
120 $12.67350 $1520.82
270 $11.55526 $3119.9202
510 $10.80975 $5512.9725

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