FGD3245G2-F085V Description

FGD3245G2-F085V transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGD3245G2-F085V MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor FGD3245G2-F085V has the common source configuration.

FGD3245G2-F085V Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FGD3245G2-F085V Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display