MDI100-12A3

new-10%

Manufacturer part number:MDI100-12A3

Manufacturer:IXYS

Description:Trans IGBT Module N-CH 1.2KV 135A 7-Pin Y4-M5

Case Package:SOT-23

Datasheet:MDI100-12A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	Y4-M5
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	560W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MDI
JESD-30 Code	R-XUFM-X5
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	560W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	135A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.2kV
Input Capacitance	5.5nF
Turn On Time	150 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 75A
Turn Off Time-Nom (toff)	700 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	5.5nF @ 25V
VCEsat-Max	3 V
Height	30mm
Length	94mm
Width	34mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free