MMIX1F360N15T2

new-10%

Manufacturer part number:MMIX1F360N15T2

Manufacturer:IXYS

Description:MOSFET N-CH 150V 235A

Case Package:SOT-23

Datasheet:MMIX1F360N15T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Number of Pins	24
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	GigaMOS™, TrenchT2™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	21
JESD-30 Code	R-PDSO-G21
Number of Elements	1
Power Dissipation-Max	680W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	47500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	235A Tc
Gate Charge (Qg) (Max) @ Vgs	715nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	115 ns
Continuous Drain Current (ID)	235A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.0044Ohm
Pulsed Drain Current-Max (IDM)	900A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	3000 mJ
Height	5.7mm
Length	25.25mm
Width	23.25mm
RoHS Status	ROHS3 Compliant