BCP56-16-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
BCP56-16-TP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BCP56-16-TP Product Details
BCP56-16-TP Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 80V maximal voltage - Collector Emitter Breakdown.
BCP56-16-TP Features
the DC current gain for this device is 63 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP56-16-TP Applications
There are a lot of Micro Commercial Co BCP56-16-TP applications of single BJT transistors.