FJP13009TU Overview

In this device, the DC current gain is 8 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 12A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.During maximum operation, collector current can be as low as 12A volts.

FJP13009TU Features

the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz

FJP13009TU Applications

There are a lot of ON Semiconductor FJP13009TU applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter