PMBT3906M,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBT3906M,315 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Power Dissipation
590mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Frequency
250MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PMBT3906
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
560mW
Case Connection
COLLECTOR
Power - Max
590mW
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-6V
hFE Min
180
Turn On Time-Max (ton)
70ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.03491
$0.3491
30,000
$0.03312
$0.9936
50,000
$0.03133
$1.5665
100,000
$0.02954
$2.954
PMBT3906M,315 Product Details
PMBT3906M,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As you can see, the part has a transition frequency of 250MHz.As a result, it can handle voltages as low as 40V volts.A maximum collector current of 200mA volts is possible.
PMBT3906M,315 Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at -6V a transition frequency of 250MHz
PMBT3906M,315 Applications
There are a lot of Nexperia USA Inc. PMBT3906M,315 applications of single BJT transistors.