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PMBT3906M,315

PMBT3906M,315

PMBT3906M,315

Nexperia USA Inc.

PMBT3906M,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT3906M,315 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 590mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PMBT3906
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 560mW
Case Connection COLLECTOR
Power - Max 590mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -6V
hFE Min 180
Turn On Time-Max (ton) 70ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.03491 $0.3491
30,000 $0.03312 $0.9936
50,000 $0.03133 $1.5665
100,000 $0.02954 $2.954
PMBT3906M,315 Product Details

PMBT3906M,315 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As you can see, the part has a transition frequency of 250MHz.As a result, it can handle voltages as low as 40V volts.A maximum collector current of 200mA volts is possible.

PMBT3906M,315 Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 250MHz

PMBT3906M,315 Applications


There are a lot of Nexperia USA Inc. PMBT3906M,315 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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