2DB1132R-13 Overview

In this device, the DC current gain is 180 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -125mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 190MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.In extreme cases, the collector current can be as low as 1A volts.

2DB1132R-13 Features

the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 190MHz

2DB1132R-13 Applications

There are a lot of Diodes Incorporated 2DB1132R-13 applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface