PZTA42-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
PZTA42-TP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.45000
$0.45
500
$0.4455
$222.75
1000
$0.441
$441
1500
$0.4365
$654.75
2000
$0.432
$864
2500
$0.4275
$1068.75
PZTA42-TP Product Details
PZTA42-TP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device exhibits a collector-emitter breakdown at 300V.
PZTA42-TP Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA
PZTA42-TP Applications
There are a lot of Micro Commercial Co PZTA42-TP applications of single BJT transistors.